Chamber cleaning via rapid thermal process during a cleaning period

ABSTRACT

A method for cleaning a process chamber, comprising the steps of introducing at least one cleaning gas to the process chamber; and employing a rapid heating module located in the process chamber, wherein the rapid heating module increases the temperature of chamber parts and improves the surface temperature uniformity of chamber parts when the module is turned on, thereby assisting the cleaning activity of the cleaning gas such that the process chamber is cleaned.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of co-pending U.S. patent applicationSer. No. 09/866,225, filed May 24, 2001, which patent application isherein incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to the field of semiconductormanufacturing. More specifically, the present invention relates to animproved chamber cleaning method via a rapid thermal process during thecleaning period.

2. Description of the Related Art

An important way to improve quality and overall efficiency infabricating devices is to clean the chamber effectively andeconomically. During processing, reactive gases released inside theprocess chamber form layers such as silicon oxides or nitrides on thesurface of a substrate being processed. Undesirable deposition occurselsewhere in the process apparatus, such as in the area between the gasmixing box and gas distribution manifold. Undesired residues also may bedeposited in or around the exhaust channel, the liners and walls of theprocess chamber during such processes. Over time, failure to clean theresidue from the process apparatus often results in degraded, unreliableprocesses and defective substrates. Without frequent cleaningprocedures, impurities from the residue built-up in the processapparatus can migrate onto the substrate. The problem of impuritiescausing damage to the devices on the substrate is of particular concernwith today's increasingly small device dimensions. Thus, process systemmaintenance is important for the smooth operation of substrateprocessing, as well as resulting in improved device yield and betterproduct performance.

Frequently, periodic chamber cleaning between processing of every Nsubstrates is desired to improve process system performance in producinghigh quality devices. Providing an efficient, non-damaging clean of thechamber and/or substrate often is able to enhance performance andquality of the devices produced. Two methods of cleaning a processchamber in the art are in-situ cleaning (also known as dry-etchcleaning) and wet cleaning.

In an in-situ cleaning operation, process gases are evacuated from theprocess chamber and one or more cleaning gases are introduced. Energy isthen applied to promote a reaction between the gases and any residueswhich may have accumulated on the process chamber's interior surfaces.Those residues react with the cleaning gases, forming gaseousby-products which are then exhausted from the process chamber, alongwith non-reacted portions of the cleaning gases. The cleaning process isfollowed by the resumption of normal wafer processing.

In contrast to an in-situ cleaning procedure, in which the processchamber remains sealed, a wet cleaning procedure is performed bybreaking the process chamber's vacuum seal and manually wiping down thechamber's interior surfaces. A wet cleaning procedure is normallyperformed to remove residues which are not entirely removed by thein-situ cleaning process, and thus slowly accumulate over time. Asolvent is sometimes used to dissolve these residues. Once cleaned, theprocess chamber is sealed and normal processing is resumed.

Unfortunately, such cleaning operations affect a substrate processingsystem's throughput in a variety of ways. For example, system throughputis reduced by the time involved in performing cleaning operations. In anin-situ cleaning process, time is spent evacuating process gases from,and introducing/evacuating the cleaning gases into/from the processchamber. Flow rates, plasma power levels, temperature, pressure, andother cleaning process conditions must also be reset to desired levelsafter the cleaning process is completed. When a wet clean is performed,opening the process chamber and physically wiping the chamber's interiorsurfaces results in even more downtime because the process mustsubsequently be re-stabilized. It is thus desirable to reduce thefrequency with which such cleaning operations are performed.

Additionally, frequent cleaning operations tend to increase wear on theprocess chamber components. For example, in-situ cleaning is typicallyperformed using fluoridated carbons (e.g., CF.sub.4, C.sub.2 or F.sub.6)or similar fluorine-containing gases (e.g., NF.sub.3) due to theirhighly reactive nature. Unfortunately, exposure to plasmas created fromsuch gases often causes the deterioration of process chamber components.This increased wear can lead to component failure; thereby causingextended downtime, and adversely affecting processing system throughput.

The use of reactive gases in cleaning process chambers, however, alsosuffers from a further disadvantage. The same radicals that providedesirable cleaning characteristics may themselves cause the formation ofresidues. For example, the use of such gases can cause the accumulationof polymer residues, which also exhibit undesirable qualities. Theaddition of oxygen to the cleaning process gas may reduce the formationof such polymer residues. In particular, ozone or an oxygen/ozonemixture may provide the desired reduction in polymer formation whilespeeding the cleaning process, due to ozone's greater reactivity.

Another example of residues generated by cleaning gases is the cleaningresidues often formed by the use of fluoridated compounds in certaincleaning processes. These compounds may react with the aluminum oranodized aluminum which makes up many of the standard process chamber'scomponents to form an aluminum fluoride residue on the interior surfacesof the chamber and the chamber's components. The reaction between thealuminum and the fluorine-containing compounds often occurs because theresidues within the process chamber vary in thickness and therefore havedifferent cleaning times. Thus, certain areas of the process chamber'sinterior may become residue-free (i.e., exposed) before others,resulting in the formation of an aluminum fluoride residue on theexposed portions of the chamber's interior.

Therefore, the prior art is deficient in the lack of effective means ofcleaning a process chamber in chemical vapor deposition (CVD) or etchingprocesses. In particular, the cleaning means should be capable ofremoving the residues created during substrate processing operations,while reducing or eliminating the subsequent formation of cleaningresidues such as polymers and aluminum fluoride. Specifically, the priorart is deficient in the lack of effective means of chamber cleaning viarapid thermal process during the cleaning period. The present inventionfulfills these long-standing needs and desires in the art.

SUMMARY OF THE INVENTION

In one embodiment of the present invention there is provided a methodfor cleaning a process chamber, comprising the steps of introducing atleast one cleaning gas to the process chamber; and employing a rapidheating module located in the process chamber, wherein the rapid heatingmodule increases the temperature of chamber parts and improves thesurface temperature uniformity of chamber parts when the module isturned on, thereby assisting the cleaning activity of the cleaning gassuch that the process chamber is cleaned.

In one embodiment of the present invention there is provided a methodfor cleaning a process chamber, comprising the steps of introducing atleast one halogen-containing gas to the process chamber; and employing arapid heating module located in the process chamber, wherein the rapidheating module comprises a high power lamp assembly, a resistive heaterassembly, an inductive heater assembly, or a combination of two or moreof the assemblies, wherein the rapid heating module increases thetemperature of chamber parts and improves the surface temperatureuniformity of chamber parts when the module is turned on, therebyassisting the cleaning activity of the cleaning gas such that theprocess chamber is cleaned.

In one embodiment of the present invention there is provided a methodfor cleaning a process chamber, comprising the steps of introducing atleast one fluorine-containing gas to the process chamber; and employinga rapid heating module located in the process chamber, wherein the rapidheating module comprises a high power lamp assembly placed at the bottomof the process chamber, a resistive heater assembly or an inductiveheater assembly embedded in the chamber wall next to the liners, or acombination of two or more of the assemblies, wherein the rapid heatingmodule increases the temperature of chamber parts and improves thesurface temperature uniformity of chamber parts when the module isturned on, thereby assisting the cleaning activity of the cleaning gassuch that the process chamber is cleaned.

In another embodiment of the present invention there is provided amethod for cleaning a process chamber, comprising the steps ofintroducing at least one precursor gas to the process chamber; applyinga plasma to the precursor gas in the process chamber, wherein the plasmaactivates the precursor gas to generate reactive species; and employinga rapid heating module located in the process chamber, wherein the rapidheating module increases the temperature of chamber parts and improvesthe surface temperature uniformity of chamber parts when the module isturned on, thereby assisting the cleaning activity of the reactivespecies such that the process chamber is cleaned.

In another embodiment of the present invention there is provided amethod for cleaning a process chamber, comprising the steps ofintroducing at least one halogen-containing gas to the process chamber;applying a plasma to the halogen-containing gas in the process chamber,wherein the plasma activates the halogen-containing gas to generatereactive species; and employing a rapid heating module located in theprocess chamber, wherein the rapid heating module comprises a high powerlamp assembly, a resistive heater assembly, an inductive heaterassembly, or a combination of two or more of the assemblies, wherein therapid heating module increases the temperature of chamber parts andimproves the surface temperature uniformity of chamber parts when themodule is turned on, thereby assisting the cleaning activity of thereactive species such that the process chamber is cleaned.

In another embodiment of the present invention there is provided amethod for cleaning a process chamber, comprising the steps ofintroducing at least one fluorine-containing gas to the process chamber;applying a plasma to the fluorine-containing gas in the process chamber,wherein the plasma activates the fluorine-containing gas to generatereactive species; and employing a rapid heating module located in theprocess chamber, wherein the rapid heating module comprises a high powerlamp assembly placed at the bottom of the process chamber, a resistiveheater assembly or an inductive heater assembly embedded in the chamberwall next to the liners, or a combination of two or more of theassemblies, wherein the rapid heating module increases the temperatureof chamber parts and improves the surface temperature uniformity ofchamber parts when the module is turned on, thereby assisting thecleaning activity of the reactive species such that the process chamberis cleaned.

In yet another embodiment of the present invention there is provided amethod for cleaning a process chamber, comprising the steps ofintroducing at least one precursor gas to a remote chamber, wherein theremote chamber is connected to the interior of the process chamber;applying a plasma to the precursor gas in the remote chamber wherein theplasma activates the precursor gas to generate reactive species;introducing the reactive species to the process chamber; and employing arapid heating module located in the process chamber, wherein the rapidheating module increases the temperature of chamber parts and improvesthe surface temperature uniformity of chamber parts when the module isturned on, thereby assisting the cleaning activity of the reactivespecies such that the process chamber is cleaned.

In yet another embodiment of the present invention there is provided amethod for cleaning a process chamber, comprising the steps ofintroducing at least one halogen-containing gas to a remote chamber,wherein the remote chamber is connected to the interior of the processchamber; applying a plasma to the halogen-containing gas in the remotechamber wherein the plasma activates the halogen-containing gas togenerate reactive species; introducing the reactive species to theprocess chamber; and employing a rapid heating module located in theprocess chamber, wherein the rapid heating module comprises a high powerlamp assembly, a resistive heater assembly, an inductive heaterassembly, or a combination of two or more of the assemblies, wherein therapid heating module increases the temperature of chamber parts andimproves the surface temperature uniformity of chamber parts when themodule is turned on, thereby assisting the cleaning activity of thereactive species such that the process chamber is cleaned.

In yet another embodiment of the present invention there is provided amethod for cleaning a process chamber, comprising the steps ofintroducing at least one fluorine-containing gas to a remote chamber,wherein the remote chamber is connected to the interior of the processchamber; applying a plasma to the fluorine-containing gas in the remotechamber wherein the plasma activates the fluorine-containing gas togenerate reactive species; introducing the reactive species to theprocess chamber; and employing a rapid heating module located in theprocess chamber, wherein the rapid heating module comprises a high powerlamp assembly placed at the bottom of the process chamber, a resistiveheater assembly or an inductive heater assembly embedded in the chamberwall next to the liners, or a combination of two or more of theassemblies, wherein the rapid heating module increases the temperatureof chamber parts and improves the surface temperature uniformity ofchamber parts when the module is turned on, thereby assisting thecleaning activity of the reactive species such that the process chamberis cleaned.

Other and further aspects, features, and advantages of the presentinvention will be apparent from the following description of theembodiments of the invention given for the purpose of disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the matter in which the above-recited features, advantages andobjects of the invention, as well as others which will become clear, areattained and can be understood in detail, more particular descriptionsof the invention briefly summarized above may be had by reference tocertain embodiments thereof which are illustrated in the appendeddrawings. These drawings form a part of the specification. It is to benoted, however, that the appended drawings illustrate embodiments of theinvention and therefore are not to be considered limiting in theirscope.

FIG. 1 shows an AKT CVD-5500 chamber wall and liner temperaturemeasurement. One eighth inch thick ceramic spacers were added betweenthe liners and wall. Heat transfer and liner temperature was studied.

FIG. 2 shows a schematic drawing of a rapid thermal process (RTP) moduleinstalled in a process chamber. The RTP module can be a resistive heaterassembly, a high-power lamp array, or a combination of both.

FIG. 3 shows a schematic drawing of a rapid thermal process (RTP) moduleinstalled in a process chamber, wherein remote plasma source cleaning(RPSC) is employed to assist the cleaning. The RTP module can be aresistive heater assembly, a high-power lamp array, or a combination ofboth.

DETAILED DESCRIPTION

In one embodiment of the present invention there is provided a methodfor cleaning a process chamber, comprising the steps of introducing atleast one cleaning gas to the process chamber; and employing a rapidheating module located in the process chamber, wherein the rapid heatingmodule increases the temperature of chamber parts and improves thesurface temperature uniformity of chamber parts when the module isturned on, thereby assisting the cleaning activity of the cleaning gassuch that the process chamber is cleaned.

Specifically, the cleaning gas may be a fluorine-containing gas, achlorine-containing gas or a halogen-containing gas. Representativeexamples of fluorine-containing gas include HF, F.sub.2, NF.sub.3,SF.sub.6, C.sub.2 F.sub.6, CF.sub.4, and C.sub.3F.sub.8. The rapidheating module may be a high power lamp assembly placed at the bottom ofthe chamber, a resistive heater or an inductive heater assembly embeddedin the chamber wall next to the liner, or a combination of any two orthree. The process chamber may be a CVD or etch chamber.

In one embodiment of the present invention there is provided a methodfor cleaning a process chamber, comprising the steps of introducing atleast one cleaning gas to the process chamber; and employing a rapidheating module located in the process chamber, wherein the rapid heatingmodule comprises a high power lamp assembly, a resistive heaterassembly, an inductive heater assembly, or a combination of two or moreof the assemblies, wherein the rapid heating module increases thetemperature of chamber parts and improves the surface temperatureuniformity of chamber parts when the module is turned on, therebyassisting the cleaning activity of the cleaning gas such that theprocess chamber is cleaned. Specifically, the halogen-containing gas maybe a fluorine-containing gas or a chlorine-containing gas.Representative examples of the fluorine-containing gas include HF,F.sub.2, NF.sub.3, SF.sub.6, C.sub.2 F.sub.6, CF.sub.4, andC.sub.3F.sub.8. The process chamber may be a CVD or etch chamber.

In one embodiment of the present invention there is provided a methodfor cleaning a process chamber, comprising the steps of introducing atleast one cleaning gas to the process chamber; and employing a rapidheating module located in the process chamber, wherein the rapid heatingmodule comprises a high power lamp assembly placed at the bottom of theprocess chamber, a resistive heater assembly or an inductive heaterassembly embedded in the chamber wall next to the liners, or acombination of two or more of the assemblies, wherein the rapid heatingmodule increases the temperature of chamber parts and improves thesurface temperature uniformity of chamber parts when the module isturned on, thereby assisting the cleaning activity of the cleaning gassuch that the process chamber is cleaned. Representative examples of thefluorine-containing gas and the process chamber are as disclosed supra.

In another embodiment of the present invention there is provided amethod for cleaning a process chamber, comprising the steps ofintroducing at least one precursor gas to the process chamber; applyinga plasma to the precursor gas in the process chamber, wherein the plasmaactivates the precursor gas to generate reactive species; and employinga rapid heating module located in the process chamber, wherein the rapidheating module increases the temperature of chamber parts and improvesthe surface temperature uniformity of chamber parts when the module isturned on, thereby assisting the cleaning activity of the reactivespecies such that the process chamber is cleaned. The precursor gas maybe the same as disclosed supra. The rapid heating module may comprisethose assemblies and optionally in those combinations also disclosedsupra. The process chamber may be a CVD or etch chamber.

In another embodiment of the present invention there is provided amethod for cleaning a process chamber, comprising the steps ofintroducing at least one halogen-containing gas to the process chamber;applying a plasma to the halogen-containing gas in the process chamber,wherein the plasma activates the halogen-containing gas to generatereactive species; and employing a rapid heating module located in theprocess chamber, wherein the rapid heating module comprises a high powerlamp assembly, a resistive heater assembly, an inductive heaterassembly, or a combination of two or more of the assemblies, wherein therapid heating module increases the temperature of chamber parts andimproves the surface temperature uniformity of chamber parts when themodule is turned on, thereby assisting the cleaning activity of thereactive species such that the process chamber is cleaned.Representative examples of the halogen-containing gas and the processchamber are as disclosed supra. The rapid heating module may be locatedas disclosed supra.

In another embodiment of the present invention there is provided amethod for cleaning a process chamber, comprising the steps ofintroducing at least one fluorine-containing gas to the process chamber;applying a plasma to the fluorine-containing gas in the process chamber,wherein the plasma activates the fluorine-containing gas to generatereactive species; and employing a rapid heating module located in theprocess chamber, wherein the rapid heating module comprises a high powerlamp assembly placed at the bottom of the process chamber, a resistiveheater assembly or an inductive heater assembly embedded in the chamberwall next to the liners, or a combination of two or more of theassemblies, wherein the rapid heating module increases the temperatureof chamber parts and improves the surface temperature uniformity ofchamber parts when the module is turned on, thereby assisting thecleaning activity of the reactive species such that the process chamberis cleaned. Representative examples of the fluorine-containing gas andthe process chamber are as disclosed supra.

In yet another embodiment of the present invention there is provided amethod for cleaning a process chamber, comprising the steps ofintroducing at least one precursor gas to a remote chamber, wherein theremote chamber is connected to the interior of the process chamber;applying a plasma to the precursor gas in the remote chamber wherein theplasma activates the precursor gas to generate reactive species;introducing the reactive species to the process chamber; and employing arapid heating module located in the process chamber, wherein the rapidheating module increases the temperature of chamber parts and improvesthe surface temperature uniformity of chamber parts when the module isturned on, thereby assisting the cleaning activity of the reactivespecies such that the process chamber is cleaned. The precursor gas maybe the same as the gases disclosed supra. The rapid heating module maycomprise those assemblies and optionally in those combinations alsodisclosed supra. The process chamber may be a CVD or etch chamber.

In yet another embodiment of the present invention there is provided amethod for cleaning a process chamber, comprising the steps ofintroducing at least one halogen-containing gas to a remote chamber,wherein the remote chamber is connected to the interior of the processchamber; applying a plasma to the halogen-containing gas in the remotechamber wherein the plasma activates the halogen-containing gas togenerate reactive species; introducing the reactive species to theprocess chamber; and employing a rapid heating module located in theprocess chamber, wherein the rapid heating module comprises a high powerlamp assembly, a resistive heater assembly, an inductive heaterassembly, or a combination of two or more of the assemblies, wherein therapid heating module increases the temperature of chamber parts andimproves the surface temperature uniformity of chamber parts when themodule is turned on, thereby assisting the cleaning activity of thereactive species such that the process chamber is cleaned.Representative examples of the halogen-containing gas and the processchamber are as disclosed supra. The rapid heating module may be locatedas disclosed supra.

In yet another embodiment of the present invention there is provided amethod for cleaning a process chamber, comprising the steps ofintroducing at least one fluorine-containing gas to a remote chamber,wherein the remote chamber is connected to the interior of the processchamber; applying a plasma to the fluorine-containing gas in the remotechamber wherein the plasma activates the fluorine-containing gas togenerate reactive species; introducing the reactive species to theprocess chamber; and employing a rapid heating module located in theprocess chamber, wherein the rapid heating module comprises a high powerlamp assembly placed at the bottom of the process chamber, a resistiveheater assembly or an inductive heater assembly embedded in the chamberwall next to the liners, or a combination of two or more of theassemblies, wherein the rapid heating module increases the temperatureof chamber parts and improves the surface temperature uniformity ofchamber parts when the module is turned on, thereby assisting thecleaning activity of the reactive species such that the process chamberis cleaned. Representative examples of the fluorine-containing gas andthe process chamber are as disclosed supra.

Provided herein is a method for cleaning a process chamber by employinga rapid thermal process (RTP) module to quickly increase the chamberparts temperature during the process chamber cleaning period. In AKTplasma enhanced chemical vapor deposition (PECVD) systems, thedeposition process temperature is optimized to be around 300° C. for thelarge-size glass substrates. Therefore, the process chamber is designedto achieve this temperature (Tsub) with the best substrate temperatureuniformity. However, due to the single active heater source, thesusceptor, and different heat transfer mechanisms, the chamber parts,especially those exposed to the deposition plasma, exhibit a strongsurface temperature variation as shown in FIG. 1.

An RTP module, either a high power lamp or embedded resistive heatingsystem, can be employed during the chamber cleaning period to quicklyincrease the chamber parts' temperature and achieve a better surfacetemperature uniformity among all parts exposed to the deposition plasma.Since the film dry etch rate increases with the surface temperature,such rapid heating method will increase the cleaning rate significantlyand reduce the consumption of cleaning gases.

Table 1 shows a typical relationship of clean rate vs. surfacetemperature. The data were obtained in an actual AKT CVD-3500 chamber.The film etch rate was calculated using the formula: Etch rate=(thefinal thickness−the initial thickness)/etch time. TABLE 1 Approx. TsubEtch Rate Film Type Tsusc (° C.) (° C.) (A/min) SiN 120/130 90 18448180/190 150 19224 240/250 200 21036 α-Si 120/130 90 23100 180/190 15026172 240/250 200 29370 SiO 120/130 90 976 180/190 150 1144 240/250 2001842Tsusc: susceptor set temperature (inner heater/outer heatercombination); Approx.Tsub: the estimated substrate surface temperature.

This RTP module can be applied with either in-situ plasma cleaningprocess or the remote plasma source cleaning (RPSC) process. Thismethodology can be expanded easily by a person having ordinary skill inthis art to other semiconductor processes in the cleaning of CVD or etchchambers.

The following examples are given for the purpose of illustrating variousembodiments of the invention and are not meant to limit the presentinvention in any fashion.

EXAMPLE 1

Chamber Wall and Liner Temperature Measurement

In AKT CVD-5500 chamber system, ⅛″ thick ceramic spacers were addedbetween the liners and chamber wall to study heat transfer and linertemperature (FIG. 1). Eleven thermocouples (TCs) were installed, six ofwhich survived (i.e., TC1, TC2, TC5, TC6, TC10 and TC11). The sixsurviving TCs were Kepton-taped to different places on the chamber wall,liners and shadow frame (for substrate clamping purpose).

TC1 was attached to the middle of the left-side liner, while TC2 wasplaced underneath on the chamber wall. Similarly, TC5 was attached tothe middle of the slit valve side liner, while TC6 was embeddedunderneath on the chamber wall. TC10 was placed on the cornerelbow-shaped liner, while TC11 was laid on the shadow frame top surface.

All the temperature readings were recorded at different processconditions though the susceptor temperature was maintained at 350/360°C. for inner/outer heater combination. With this configuration, thesubstrate temperature can be maintained at roughly 320° C. across theentire deposition area. The susceptor heater was the only active heatingdevice in the process chamber.

The results are shown in Table 2. Under the normal configuration (leftcolumn of Table 2), there exists a great degree of temperaturenon-uniformity in the process chamber. For example, shadow frame (TC11)shows the highest reading due to the fact that it has direct contactwith the substrate that lies right on top of the susceptor. However, theelbow liner at the chamber corner (TC10) has the lowest temperaturereading among all the TCs that are exposed to the plasma. Though thechamber wall temperature readings (TC2 & TC6) are even lower, it iseffectively shielded by the liners and thus has no film deposition. Theliners, which are made of anodized aluminum, have achieved the designedpurpose of raising the surface temperature significantly, i.e.,TC1>>TC2, TC5>>TC6.

Under different process conditions, there exists a large variation ofthe temperature changes for different chamber parts. Gas flow is themost critical parameter in inducing the temperature change. H.sub.2 gasflow, for example, induces the greatest temperature decrease. Otherparameters, such as the pressure and electrode spacing, may also inducetemperature changes to different extents.

When ⅛″ thick ceramic spacers are inserted between the liners andchamber wall (right column of Table 2), a vacuum gap is created thereinand thus the heat conduction is reduced from the liners to the chamberwalls. It is shown that the degree of temperature non-uniformity in theprocess chamber is not as great as that shown in the left column. Thususing ceramic spacers can create some temperature uniformity in thechamber, although ceramic spacers only achieve limited success inraising the temperature, as identified in TC5 and TC10, with N.sub.2 andH.sub.2 flow. However, such approach is not quite effective, as the heatloss from the gas flow is much stronger than other heat loss mechanisms.Therefore it would be advantageous to have another active heating deviceto effectively perform an RTP cleaning of the chamber. TABLE 2 AKTCVD-5500 Chamber Wall & Liner Temperature Measurement ⅛″ thick Normalceramic spacer Configuration Under liners Process TC1 TC2 TC5 TC6 TC10TC11 TC1 TC2 TC5 TC6 TC10 TC11 No gas, xchg 250 154 240 149 228 279 Nogas, 1500 mil 268 156 254 159 244 296 264 147 255 237? 225 294 10 slmN2/1.5T/ 202 141 186 135 156 298 200 119 200 119  171 292 1500 mil 10slm N2/1.5T/ 199 139 183 131 154 296 750 mil 4 slm H2/1.2T/ 172 131 159118 140 293 173 124 170 115  140 294 1000 mil 4 slm H2/3.0T/ 155 127 145114 123 298 1000 mil 12 slm 196 140 184 130 152 283 N2/TVO(580 mT)/ 1600mil(Tsusc = 350/360° C., unit: ° C.)

EXAMPLE 2

AKT Fat-Belly-Liner Chamber

In AKT CVD-5500 alpha (A) chamber, 45-degree liners were changed toFat-Belly type on all sides except the window side (view limited). Table3 shows the clean rate comparison between the original and Fat-Bellytype 45-degree liners. TABLE 3 SiH4 Dep. Time Dep. Rate Cln. Time Cln.Rate (sccm) (sec) (20 mm) (sec) (A/min) GH Orig. Liner 670 180 1851 486941 Fat-Belly 670 180 1813 48.7 6701 45-deg Liners AH Orig. Liner 131060 1250 13 5769 Fat-Belly 1310 110 1263 20 6947 45-deg LinersDep.: deposition; Cln: clean; GH: high-deposition rate SiNx film; andAH: high-deposition rate amorphous silicon (α-Si) film.

It is shown that Fat-Belly 45-degree liners did achieve faster cleanrate in the α-Si cleaning (−20% for AH) case, but in the SiN (GH) case,the clean rate is the same (Table 3). Additionally, Fat-Belly 45-degreeliners achieved ˜2-3% better deposition uniformity in α-Si and SiNfilms. The fat-belly liners are modified liners which are in closerproximity to the active heating device (i.e., the susceptor) and have alarger thermal mass compared with the standard liners. Though there wereno active heating elements embedded, the potential of raising thechamber part's surface temperature and thus promoting cleaning rate inthe AH film cleaning case with the addition of an RTP module is obvious.

In addition, considering that the corners are still the last place toclean, and that the corners are of much lower surface temperature asmeasured and shown in FIG. 1, it can be concluded that further raisingthe corner liners' temperatures is the key to promoting the overallcleaning rate. Embedded active heating device in these corner liners maybe employed to achieve this goal.

EXAMPLE 3

Rapid Thermal Process

In AKT PECVD systems, a significant amount of cleaning time is spentcleaning the chamber peripheral parts, such as liners which have thelower surface temperatures due to the close proximity to the wall. Therapid heating module can be a high power lamp placed at the bottom ofthe chamber, or a resistive heater embedded in the wall next to theliner, or a combination of both. It is contemplated that an inductiveheater may also be embedded in the wall next to the liner and may beused singly or in combination with the high power lamp and/or theresistive heater.

When the module heats up, liners and other chamber parts experience ahigher surface temperature, which facilitates faster cleaning of thefilm residues. As was shown in Table 1, a higher surface temperatureresults in a higher dry etch rate; by extension, further raising thesurface temperature of the chamber parts through the action of an RTPmodule will increase the cleaning rate.

Once the cleaning is effectively done, the rapid heating module isturned off and, due to the effective heat conduction to the huge thermalmass of the chamber body wall, the chamber parts' temperatures quicklyreturn to the equilibrated process temperature. As this process cancoincide with the film seasoning period, no throughput loss occurs.During the film deposition period, all chamber parts remain at thenormal temperature to provide the optimized substrate temperature.

Specifically, during the cleaning period, a cleaning gas is flowed tothe chamber (FIG. 2). A fluorine-containing gas, a chlorine-containinggas or a halogen-containing gas may be used as the cleaning gas. Forexample, a fluorine-containing gas, e.g., HF, F.sub.2, NF.sub.3,SF.sub.6, C.sub.2 F.sub.6, CF.sub.4, and C.sub.3F.sub.8, or otherfluorocarbon gases of the general formula C.sub.X, F.sub.Y is commonlyused for cleaning. A rapid heating module, e.g., a high power lampplaced at the bottom of the chamber, or a resistive heater embedded inthe wall next to the liner, or a combination of both, is applied to thechamber to heat up the liners and other chamber parts.

EXAMPLE 4

Rapid Thermal Process Combined with Other Cleaning Process

The rapid thermal process may be applied together with either in-situplasma cleaning process, or the remote plasma source cleaning (RPSC)process during the cleaning period. In in-situ plasma cleaning systems,precursor gases are supplied to the chamber. Then, by locally applying aglow discharge plasma to the precursor gases within the chamber,reactive species are generated. The reactive species clean the chambersurfaces by forming volatile compounds with the process residues onthose surfaces. A rapid heating module, e.g., a high power lamp placedat the bottom of the chamber, or a resistive heater embedded in the wallnext to the liner, or a combination of both, is applied to the chamberto heat up the liners and other chamber parts.

Alternatively, the plasma may be provided remotely (FIG. 3). A remoteplasma source cleaning system comprises a cleaning gas source connectedto a remote activation chamber. The cleaning gas source includes asource of a precursor gas, an electronically-operated valve and flowcontrol mechanism for controlling the flow of precursor gas and aconduit for flowing the gas into the remote activation chamber locatedoutside and at a distance from the process chamber. A power activationsource, for example a high-power microwave generator, is used toactivate the precursor gas within the remote activation chamber. Theremote chamber may be a sapphire tube and the power source a 2.54 GHzmicrowave energy source with its output aimed at the sapphire tube. Theprecursor gas may be a fluorine-containing gas, a chlorine-containinggas or a halogen-containing gas, for example, NF.sub.3. The flow rate ofactivated species is about 2 liters per minute and the process chamberpressure is about 0.5 Torr.

To activate the precursor gas, the microwave source delivers about3,000-12,000 Watts to the remote activation chamber. A value of 5,000Watts may be used for many applications. Upon activation, reactivespecies are generated in the remote chamber, and these reactive species(e.g. F radicals) are flowed into the process chamber wherein cleaningof the chamber occurs as in an in-situ plasma cleaning process.

One skilled in the art will readily appreciate that the presentinvention is well adapted to carry out the objects and obtain the endsand advantages mentioned, as well as those inherent therein. It will beapparent to those skilled in the art that various modifications andvariations can be made in practicing the present invention withoutdeparting from the spirit or scope of the invention. Changes therein andother uses will occur to those skilled in the art which are encompassedwithin the spirit of the invention as defined by the scope of theclaims.

1. An apparatus for processing a substrate, comprising: a rectangularchamber body defined by a chamber wall, chamber bottom and top chamberportion; a lamp assembly disposed in the chamber body; and a substratesupport disposed on the chamber bottom.
 2. The apparatus of claim 1,further comprising a resistive heater assembly, an inductive heaterassembly, or a combination thereof.
 3. The apparatus of claim 1, furthercomprising a remote activation source coupled to the rectangular chamberbody.
 4. The apparatus of claim 3, further comprising a cleaning gassource connected to the remote activation source.
 5. The apparatus ofclaim 2, wherein the process chamber further comprises one or moreliners disposed adjacent the chamber walls.
 6. The apparatus of claim 2,wherein the resistive heater assembly or the inductive heater assemblyis embedded in the chamber wall.
 7. The apparatus of claim 1, furthercomprising an RF power source coupled to the showerhead.
 8. Theapparatus of claim 1, wherein the substrate support comprises aresistive heated substrate support.
 9. The apparatus of claim 1, furthercomprising a slit valve disposed in one chamber wall and a dry pumpcoupled to one chamber wall.
 10. The apparatus of claim 5, furthercomprising one or more thermocouples disposed on the chamber wall or oneor more liners.
 11. The apparatus of claim 5, further comprising one ormore spacers disposed between the one or more liners and the chamberwalls.
 12. The apparatus of claim 5, further comprising a showerheaddisposed in the top chamber portion.
 13. An apparatus for processing asubstrate, comprising: a rectangular chamber body defined by a chamberwall, chamber bottom, and top chamber portion; a rapid heating modulecomprising at least a lamp assembly disposed in the rectangular chamberbody; a substrate support disposed on the chamber bottom; and a remoteplasma source cleaning system fluidly connected to the rectangularchamber body.
 14. The apparatus of claim 12, wherein the remote plasmasource cleaning system comprises a cleaning gas source connected to aremote activation chamber.
 15. The apparatus of claim 13, wherein thecleaning gas source comprises a cleaning gas source comprises a sourceof a precursor gas, an electronically-operated valve and flow controlledmechanism coupled to the source of the precursor gas, and a conduitdisposed between the source of precursor gas and the remote activationchamber.
 16. The apparatus of claim 13, further comprising a poweractivation source disposed adjacent the remote activation chamber. 17.The apparatus of claim 12 further comprising a resistive heaterassembly, an inductive heater assembly, or a combination thereof. 18.The apparatus of claim 16, wherein the process chamber further comprisesone or more liners disposed adjacent the chamber walls.
 19. Theapparatus of claim 16, wherein the resistive heater assembly or theinductive heater assembly is embedded in the chamber wall.
 20. Theapparatus of claim 12, wherein the substrate support comprises aresistive heated substrate support.
 21. The apparatus of claim 12,further comprising a slit valve disposed in one chamber wall and a drypump coupled to one chamber wall.
 22. The apparatus of claim 17, furthercomprising one or more thermocouples disposed on the chamber wall or oneor more liners.
 23. The apparatus of claim 17, further comprising one ormore spacers disposed between the one or more liners and the chamberwalls.
 24. The apparatus of claim 12, further comprising a showerheaddisposed in the top chamber portion.
 25. An apparatus for processing asubstrate, comprising: a rectangular chamber body defined by a chamberwall, chamber bottom, and top chamber portion; a showerhead disposed inthe top chamber portion; a lamp assembly disposed in the rectangularchamber body; a substrate support disposed on the chamber bottom; and aremote plasma source cleaning system fluidly connected to therectangular chamber body, and the remote plasma source cleaning systemcomprising: a cleaning gas source comprising: a source of a precursorgas and an electronically-operated valve and flow controlled mechanismcoupled to the source of the precursor gas; a remote activation chamberconnected to the cleaning gas source by a conduit; and a poweractivation source disposed adjacent the remote activation chamber. 26.The apparatus of claim 23, wherein the substrate support comprises aresistive heated substrate support.
 27. The apparatus of claim 23,further comprising a slit valve disposed in one chamber wall and a drypump coupled to one chamber wall.